Substrate processing apparatus and substrate processing method

Abstract

The present invention addresses the need for a substrate processing apparatus and method for forming a nitride semiconductor layer on a substrate. The substrate processing apparatus comprises: a film-forming chamber in a near-atmospheric pressure environment housing a substrate support portion for supporting a substrate; a first gas supply device supplying a mixed gas containing a nitrogen-containing raw material gas; a remote plasma unit receiving the mixed gas containing the nitrogen-containing raw material gas from the first gas supply device, generating a plasma of the mixed gas, generating hydrazine in the plasma, and supplying a nitrogen-containing gas containing hydrazine to the film-forming chamber; and a second gas supply device supplying a gas containing an organometallic compound to the film-forming chamber; and reacting the organometallic compound gas with the nitrogen-containing gas to form a nitride semiconductor layer on the substrate.

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