Physical vapor deposition system

TW202630859APending Publication Date: 2026-07-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2025-03-11
Publication Date
2026-07-16

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Abstract

A physical vapor deposition (PVD) system is provided. The PVD system includes: a chamber body enclosing a processing region; a substrate support disposed in the chamber body and configured to support a substrate; a PVD target disposed in the chamber body and over the substrate support; a radio frequency (RF) coil disposed in the chamber body, the RF coil being above the substrate support and below the PVD target; a first direct current (DC) power supply electrically coupled to the PVD target to provide a DC bias to the PVD target; and an alternating current (AC) power supply electrically coupled to the RF coil, wherein the AC power supply delivers RF power to the RF coil to generate an electromagnetic field in the processing region.
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