Method and apparatus for manufacturing silicon carbide single-crystal substrates

Abstract

The purpose is to provide a method and apparatus for manufacturing a silicon carbide single-crystal substrate with high flatness. The method for manufacturing the silicon carbide single-crystal substrate is characterized by: separately measuring a first thickness of the central portion of the silicon carbide single-crystal substrate and a second thickness of the outer peripheral portion existing on the outer periphery side of the central portion; separately measuring a first pressure applied to the central portion of the silicon carbide single-crystal substrate and a second pressure applied to the outer peripheral portion of the silicon carbide single-crystal substrate; and determining the relationship between a first index obtained from the first pressure and the second pressure, and a second index obtained from the first thickness and the second thickness.

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