Semiconductor structure forming method and semiconductor structure

Abstract

A method that includes etching at least one conductive structure to form an opening separating the conductive structure into shorter portions; and applying at least one passivation treatment to an upper portion of the opening. The method can also include forming a non-conformal material layer having a lower fixed charge concentration than silicon nitride. In some embodiments, the non-conformal material layer has a first portion on the upper portion of the opening passivated by the at least one passivation treatment, and the non-conformal layer has a second portion that extends to the base of the opening, the first portion of the non-conformal material layer having a lesser thickness than the second portion of the non-conformal material layer. In some embodiments, the method further includes depositing a fill dielectric on the non-conformal material layer.