Semiconductor devices and methods for manufacturing semiconductor devices

Abstract

A semiconductor device capable of reducing wafer area and a method for manufacturing the semiconductor device are provided. One embodiment of the semiconductor device includes: a first wafer having a first substrate on which a first transistor is formed; and a second wafer disposed above the first wafer and having a second substrate on which a second transistor is formed. The second substrate includes a first insulating film region and a second insulating film region respectively penetrating the second substrate. The first wafer and the second wafer are electrically connected via a first via group including at least a first through-hole and a second through-hole respectively penetrating the first insulating film region, and a second via group including at least a third through-hole and a fourth through-hole respectively penetrating the aforementioned second insulating film region. The first via group is arranged with a pitch different from that of the second via group.