Semiconductor structure and method offorming the same, and separated contact plate structure

TW202630949APending Publication Date: 2026-07-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114107011
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-07
Filing Date
2025-02-26
Publication Date
2026-07-16
Patent Text Reader

Abstract

A multiple cold plate structure and methods for forming the same. In some embodiments, the structure includes a first component, and a second component attached to an interposer. The first component may have a thickness that differs from that of the second component. The structure includes a first contact plate attached to a top surface of the first component and a second contact plate attached to a top surface of the second component. The thickness of the first and second contact plates differ and are selected so that the top surface of the first contact plate and the second contact plate are substantially co-planar with one another. In some embodiments, the structure optionally includes an upper plate attached to the top surfaces of the first contact plate and the second contact plate.
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