Electrostatic protection structure for a GAN transistor, transistor unit and transistor structure

Abstract

An electrostatic protection structure for a GaN transistor comprises a substrate, an epitaxial layer, a first doped semiconductor layer, a second doped semiconductor layer, and a metal bridging layer. The epitaxial layer is disposed on the upper surface of the substrate. The first doped semiconductor layer is disposed on the upper surface of the epitaxial layer and comprises a first region and a second region separated from each other. The second doped semiconductor layer is disposed on the upper surface of the first doped semiconductor layer and comprises a third region and a fourth region separated from each other. The third region is disposed on the upper surface of the first region, and the fourth region is disposed on the upper surface of the second region. The metal bridging layer is disposed on the epitaxial layer between the first region and the second region.

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