Laser processing methods
The laser processing method allows for flexible pattern formation on substrates by using a scanning mechanism and light-shielding members to adjust scanning positions and directions, addressing inefficiencies in existing methods and enhancing production output.
TW202631292APending Publication Date: 2026-08-01ORC MFG
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Patent Information
- Application Number
- TW114111195
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-20
- Filing Date
- 2025-03-25
- Publication Date
- 2026-08-01
AI Technical Summary
Technical Problem
Existing laser processing methods are inefficient as they require separate masks for different processing areas on a substrate, leading to reduced production output and inability to freely form processing patterns.
Method used
A laser processing method using a scanning mechanism, masking platform, and processing platform, with adjustable scanning start positions and directions, and the use of light-shielding members to define processing partitions, allowing for flexible formation of patterns on a substrate using a single mask.
Benefits of technology
Enables the free formation of processing patterns on a substrate, increasing production capacity and flexibility by using a single mask to create diverse patterns across different zones.
✦ Generated by Eureka AI based on patent content.
Abstract
The purpose of this invention is to provide a laser processing method that allows for the free formation of processing patterns within a laser processing apparatus. The laser processing apparatus 100 includes: an illumination optical unit 20, a masking platform 40, and a processing platform 50. Simultaneously with the switching of the angle switching mirror in the illumination optical unit 20 and the masking by the masking unit 25, the scanning mechanism 60 and the processing platform 50, or one of them, are driven and controlled to adjust the scanning start position of each masking pattern and the processing start position of the processing zone of the substrate W, determined according to process parameters.
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