Control of head sweep

The described CMP apparatus addresses non-uniform polishing rates by using an annular control groove and in-situ monitoring to adjust substrate positioning and dwell times, achieving improved polishing uniformity and control over polishing speed.

TW202631310APending Publication Date: 2026-08-01APPLIED MATERIALS INC
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Patent Information

Application Number
TW114135876
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-14
Filing Date
2025-09-18
Publication Date
2026-08-01

AI Technical Summary

Technical Problem

Chemical mechanical polishing (CMP) processes often result in non-uniform polishing rates across a substrate, with edge regions being polished at a higher rate than the central regions, leading to uneven substrate surfaces.

Method used

A chemical mechanical polishing apparatus with a platform and carrier head system that utilizes an annular polishing control groove and controller to adjust the lateral position of the substrate on the polishing pad, incorporating in-situ monitoring to calculate and set dwell times, and adjust polishing parameters to minimize differences between target and expected removal profiles.

Benefits of technology

This approach enhances polishing uniformity by reducing the polishing rate at edge regions, resulting in a more uniform substrate surface and improved flexibility in controlling polishing speed.

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Abstract

Systems and methods for determining values for a plurality of control parameters to minimize a difference between a target removal profile and an expected removal profile, the plurality of control parameters representing at least a first duration and a second duration and cause the carrier head to, for the first duration, moving the substrate laterally across the polishing pad such that the central region and the edge region of the substrate are positioned over a polishing surface of the polishing pad, and for the second duration, hold the substrate in a substantially laterally fixed position such that the central region of the substrate is positioned over the polishing surface of the polishing pad and the at least a portion of the edge region of the substrate is positioned over a polishing control groove of the polishing pad.
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