Methods for manufacturing components for protective film formation, protective films, substrates, and semiconductor devices.
A protective film forming composition with a specific polymer structure addresses the issue of solvent and wet etching solution resistance, ensuring effective shielding and etching process integrity in semiconductor manufacturing.
TW202631736APending Publication Date: 2026-08-01NISSAN CHEM CORP
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Patent Information
- Application Number
- TW114151062
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-20
- Filing Date
- 2025-12-24
- Publication Date
- 2026-08-01
AI Technical Summary
Technical Problem
Existing protective films in semiconductor manufacturing lack sufficient resistance to solvents in photoresist compositions and wet etching solutions, compromising the shielding function during the etching process.
Method used
A protective film forming composition containing a specific polymer with a defined repeating unit structure, a solvent, and optionally a hardening catalyst, which forms a cross-linked film with high polymer content, providing excellent resistance to solvents and wet etching solutions.
Benefits of technology
The composition enables the formation of a protective film that effectively shields semiconductor substrates from solvents and wet etching solutions, ensuring the integrity of the etching process and the quality of the semiconductor device.
✦ Generated by Eureka AI based on patent content.
Abstract
The protective film forming composition of the present invention contains a polymer having repeating units represented by the following formula (1) and a solvent; the content of the aforementioned polymer is 80% by mass or more relative to the non-volatile components of the aforementioned protective film forming composition. (In formula (1), R1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. R2 represents a single bond or -CH2-. R3 represents a single bond or a divalent chain hydrocarbon group having 1 to 20 carbon atoms. X1 represents -O- or -NH-. Y1 represents -NH-, -S-, -C(=O)-O- or -OC(=O)-. n represents an integer from 2 to 5.)
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