Transparent conductive film, transparent conductive film structure, and manufacturing method of transparent conductive film
A transparent conductive film with a first layer epitaxially bonded to a hexagonal tungsten bronze film addresses the high resistivity and cost issues of ITO, achieving low resistivity and high transmittance through aligned crystal orientation and stress reduction.
Patent Information
- Application Number
- TW114140010
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-10-18
- Filing Date
- 2025-10-16
- Publication Date
- 2026-08-01
AI Technical Summary
Existing transparent conductive films, such as Indium Tin Oxide (ITO), are expensive and have resistivity values that are higher than desired for industrial applications, necessitating improvements in conductivity and cost-effectiveness.
A transparent conductive film structure comprising a first layer epitaxially bonded to a hexagonal tungsten bronze (HTB) film, where the first layer acts as a buffer to reduce stress and improve conductivity, and the HTB film provides high conductivity through aligned crystal orientation.
The film achieves low resistivity of 1.01×10⁻³ Ω·cm or less, enhancing conductivity and reducing production costs while maintaining optical properties, with visible light transmittance of 20% to 90% and improved productivity.