Semiconductor inspection apparatus, electrical characteristic inspection apparatus and electrical characteristic inspection method

The semiconductor inspection apparatus uses a pulsed charged particle beam and advanced image analysis to enhance the sensitivity of main component inspections by isolating and analyzing feature quantities, addressing the combined electrical characteristics issue in TEGs.

TW202632724APending Publication Date: 2026-08-01HITACHI HIGH TECH CORP
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Patent Information

Application Number
TW115102354
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-30
Filing Date
2026-01-21
Publication Date
2026-08-01

AI Technical Summary

Technical Problem

The sensitivity of electrical characteristic inspections of main components in semiconductor devices is compromised due to the combined electrical characteristics of both the main and secondary elements in TEGs, leading to inaccurate and less sensitive inspection results.

Method used

A semiconductor inspection apparatus that utilizes a pulsed charged particle beam and advanced image analysis to isolate and enhance the inspection sensitivity of the main component by extracting feature quantities reflecting its electrical characteristics, independent of secondary elements.

Benefits of technology

The apparatus achieves high sensitivity in inspecting the electrical characteristics of main components by distinguishing and analyzing feature quantities specific to the main elements, thereby improving inspection accuracy.

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Abstract

This invention improves the sensitivity of determining the normality / defect of an evaluation element having a main component as the inspection object and a secondary component electrically connected to the main component. According to this disclosure, the brightness of the evaluation element image in a sample image obtained by scanning a pulsed charged particle beam under specific irradiation conditions and specific intermittent conditions is analyzed. This brightness varies depending on the irradiation or intermittent conditions of the pulsed charged particle beam, and a first characteristic and a second characteristic are extracted from these variations. Which of the first and second characteristic values ​​is related to the electrical characteristics of the main component is determined, and the normality / defect of the evaluation element is determined based on either the first characteristic value or the second characteristic value that is determined to be related to the electrical characteristics of the main component.
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