Methods of forming capacitor including a tetragonal hafnium zirconium oxide node dielectric
TW202633097APending Publication Date: 2026-08-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- TW114110491
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-27
- Filing Date
- 2025-03-20
- Publication Date
- 2026-08-01
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Abstract
depositing a second metallic electrode layer over the node dielectric layer; and annealing the amorphous hafnium zirconium oxide layer into a crystalline hafnium zirconium oxide layer. A sum of a fraction of hafnium zirconium oxide in a tetragonal phase and a fraction of hafnium zirconium oxide in an orthorhombic phase for the crystalline hafnium zirconium oxide layer may be greater than
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