Semiconductor device

Abstract

Disclosed is a semiconductor device comprising a substrate, a bit line that extends in a first direction on the substrate, a mold structure on the bit line and extending in a second direction that intersects the first direction, a vertical semiconductor pattern on a top surface of the bit line and a lateral surface of the mold structure, a gate electrode spaced apart from the mold structure and facing the vertical semiconductor pattern and extending in the second direction that intersects the bit line, and a node contact on the vertical semiconductor pattern. The vertical semiconductor pattern comprises a first part, a second part, and a third part that are sequentially on the bit line. A distance that the second part protrudes from the lateral surface of the mold structure is more than a distance that the first part and the third part protrude from the lateral surface.

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