Methods for forming a layer comprising a metal nitride or forming a threshold voltage tuning layer on a substrate and methods for filling a gap on a substrate
A method for depositing metal nitride layers on substrates by converting metal oxides with nitrogen-containing reactants addresses the challenge of finding suitable gate materials in CMOS devices and other semiconductor structures, enhancing device performance through work function and threshold voltage tuning.
Patent Information
- Application Number
- TW115115025
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2021-03-02
- Filing Date
- 2022-02-23
- Publication Date
- 2026-08-01
AI Technical Summary
Conventional semiconductor device scaling techniques face challenges in finding suitable conductive materials for gate electrodes, particularly in CMOS devices, and there is a demand for new materials in structures like MIM and VNAND cells.
A method is developed for depositing a metal nitride layer on a substrate by converting a metal oxide using a nitrogen-containing reactant, involving deposition cycles with metal precursor and oxygen reactant pulses, followed by nitrogen exposure, suitable for forming layers in CMOS devices, MIM structures, and VNAND cells.
The method enables the formation of metal nitride layers suitable for work function tuning and threshold voltage adjustment, providing improved performance in CMOS devices and other semiconductor applications.