La-Ni-O sputtering target, powder, and method for manufacturing the sputtering target.
TW202633844APending Publication Date: 2026-08-16JX NIPPON MINING & METALS CORP
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114140880
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-10-30
- Filing Date
- 2025-10-22
- Publication Date
- 2026-08-16
Abstract
The objective of this invention is to provide a high-density La-Ni-O sputtering target, powder, and a method for manufacturing the sputtering target. This invention provides a La-Ni-O sputtering target comprising lanthanum (La), nickel (Ni), and oxygen (O), with a dimensional density of 5.9 g / cm³ or higher. This invention also provides a La-Ni-O powder comprising a La₂NiO₄ crystal phase, wherein the X-ray diffraction peak intensity ratio of the La₂NiO₄ crystal phase (10₃) is 15 or higher. none
Need to check novelty before this filing date? Find Prior Art