Halide-free co-reactants for ruthenium film deposition

Abstract

Methods of depositing ruthenium-containing films are described. Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are also described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate. The method may further include forming a blocking layer on the bottom by exposing the substrate to a blocking compound; selectively depositing a ruthenium-containing film on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gap fill material.

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