Method for manufacturing a substrate for a metal-containing resist film and a semiconductor substrate

Abstract

A metal-containing resist film underlayer composition capable of forming a resist underlayer film with excellent resist pattern rectangularity and a method for manufacturing a semiconductor substrate are provided. The metal-containing resist film underlayer composition comprises a polymer and a solvent, wherein the polymer has a partial structure represented by formula (a-1) or (a-2) below, and at least one monovalent group (X) selected from the group composed of groups represented by formulas (2-1) to (2-8) below. (In formulas (a-1) to (a-2), R1 and R2 are the monovalent group (X), a monovalent organic group with 1 to 20 carbon atoms other than the monovalent group (X), a halogen atom, a hydroxyl group, or a nitro group; the bonds represented by the following formulas are single bonds or double bonds;)