Composition for cleaning photoresist pattern

TW202634053APending Publication Date: 2026-08-16DONGWOO FINE CHEM CO LTD

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Patent Information

Application Number: TW115104182
Authority / Receiving Office: TW · TW
Patent Type: Applications
Current Assignee / Owner
Priority Date: 2025-02-05
Filing Date: 2026-02-03
Publication Date: 2026-08-16

Application Information

Patent Timeline

05 Feb 2025

Priority

03 Feb 2026

Application

TW115104182

16 Aug 2026

Publication

TW202634053A

IPC: C11D7/26; G03F7/40; H10P76/20

Inventors: 全季敏; 趙庸桓

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Abstract

The present invention provides a composition for cleaning photoresist pattern including a monohydric alcohol compound, an ester compound with a specific structure, and water. The composition for cleaning photoresist pattern according to the present invention exhibits excellent cleaning power while preventing pattern collapse and damage during the cleaning of micro-patterns and minimizes the generation of impurities originating from the composition itself.

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