Process chamber with in-situ magnetic annealing and bow control, and semiconductor processing system and method of processing a semiconductor using the same

Abstract

A process chamber for fabricating a semiconductor is disclosed. In one aspect, the process chamber includes a chamber body defining a chamber volume. The process chamber also includes a pedestal having a heater arranged to heat a substrate disposed on the pedestal. The pedestal is movable within the chamber volume between a first position and a second position. When the pedestal is in the first position, the pedestal at least partially defines a process cavity in which the substrate is processed. The process chamber further includes a magnet coupled with the chamber body below the process cavity. With the pedestal in the second position and the heater heating the substrate, the magnet is arranged to expose the substrate to a magnetic field in-situ within the chamber volume.

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