Two-inhibitor scheme for selective film deposition

Abstract

Implementations of the present disclosure generally relate to the selective deposition of barrier layers on dielectric materials. More particularly, implementations described herein provide a method to selectively deposit a barrier layer on an Al-containing dielectric material over a metal material. In at least one implementation, a process for selectively depositing a barrier layer is provided and includes selectively depositing a first inhibitor on a substrate comprising an Al-containing dielectric material, a Si-containing dielectric material, and a metal material, where the first inhibitor is selectively deposited on the Al-containing dielectric material of the substrate, depositing a second inhibitor on the metal material of the substrate, removing the first inhibitor to expose the Al-containing dielectric material, and depositing the barrier layer on the exposed Al-containing dielectric material and the Si-containing dielectric material.

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