Methods for forming transition metal dichalcogenide films

Abstract

This invention provides a technique for suppressing oxidation at the membrane interface when forming a transition metal dichalcogenide film. A method comprising forming a transition metal dichalcogenide film by sulfiding a transition metal-containing film, and comprising the following steps: (a) providing a substrate comprising at least one first film selected from the group consisting of silicon-containing films and metal-containing films; (b) forming a first transition metal-containing film on the first film in a nitrogen-containing gas atmosphere; and (c) after (b), annealing the substrate in a first atmosphere containing a sulfiding gas.

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