Dual channel showerhead
TW202634102APending Publication Date: 2026-08-16APPLIED MATERIALS INC
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Patent Information
- Application Number
- TW114137899
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-10-01
- Filing Date
- 2025-10-01
- Publication Date
- 2026-08-16
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Abstract
A showerhead for a semiconductor processing system is provided. In one aspect, a showerhead includes a body that defines a first gas channel formed, at least in part, by injection holes in fluid communication with a distribution cavity in which a plurality of radially-extending ribs of the body define a plurality of radially-extending passages. A first gas is flowable along the first gas channel so that the first gas injected through the injection holes and into the distribution cavity flows radially along the radially-extending passages and so that at least a portion of the first gas flowing along such passages flows through distribution holes extending to a bottom surface of the body. The body also defines a second gas channel formed by a plurality of through holes so that a second gas is flowable therethrough. The first and second gas channels are fluidly isolated from one another within the showerhead.
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