Operation and venting system for simultaneous deposition of layers in multiple process chambers of a CVD reactor.

Abstract

This invention relates to an apparatus for simultaneously depositing layers on a substrate in multiple process chambers (1, 2). The apparatus includes gas sources (3, 4) for supplying reaction gases, wherein gas inlets (5, 6) fluidly connected to the gas sources (3, 4) are respectively connected to a switching valve (28, 29), by which the reaction gases can be selectively switched to a Run line (8, 9) leading to one of the multiple process chambers (1, 2) or a Vent line (10, 11) passing alongside the process chambers (1, 2). A differential pressure measuring device (13) provides pressure measurement between the Run line (8, 9) and the Vent line (10, 11). The differential pressure is measured, and the regulating device (32) adjusts the differential pressure to near zero by means of these measurements; it has a stable gas mass flow regulator (18) through which stable gas can be injected into the Vent line (10, 11); and it has a throttling device (7, 12) arranged downstream of the switching valves (28, 29) in the Vent line (10, 11), wherein the Vent lines (10, 11) corresponding to the plurality of process chambers (1, 2) are merged upstream of the throttling device (7, 12), wherein the regulating device (32) controls the throttling device (7, 12) using the measurements, in particular changing the valve position of the throttling valve (7) of the throttling device (7, 12).

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