Radical gas height control between plasma source and wafer
TW202634111APending Publication Date: 2026-08-16APPLIED MATERIALS INC
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Patent Information
- Application Number
- TW114147733
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-06
- Filing Date
- 2025-12-05
- Publication Date
- 2026-08-16
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Figure TWG2TA001073166_001 
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Abstract
A flow assembly configured to change the angle of delivery of gas radicals to a wafer. The flow assembly may also change the shape of the gas radicals delivered to the wafer. For example, the flow assembly can compress the gas radicals in the x-y direction or allow for the expansion of the gas radicals. The flow assembly can include a single part which changes both the height and shape of the gas radicals. The flow assembly can include multiple parts, for example, a compression part for compressing the gas radicals in the x-y direction and a ramp part for elevating the gas radicals. The angle of delivery can be changed
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