Substrate processing methods, semiconductor device manufacturing methods, substrate processing apparatus and processes

Abstract

This invention provides a technique for forming a homogeneous layer (or film) on a substrate. It comprises: (a) performing the following steps (a1), (a2), and (a3) ​​to form a layer containing a first element on the substrate; (a1) supplying a barrier gas to the substrate and forming barrier groups on the substrate, wherein the barrier groups barrier the adsorption of the first gas containing atoms of the first element onto the substrate; (a2) supplying a promoting gas to the substrate and forming promoting groups on the substrate, wherein the promoting groups promote the adsorption of the first gas onto the substrate; and (a3) ​​supplying the first gas to the substrate, later than (a2).

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