Method of modulating a line critical dimension, processing apparatus, and method of modifying a plurality of resist lines formed over a stack of layers

Abstract

Disclosed herein are approaches for line critical dimension (CD) modulation and end-to-end CD reduction with angled etch and angled deposition. One method may include forming a plurality of patterning lines over a stack of layers, wherein each of the patterning lines includes first and second sidewalls. The method may further include delivering one or more reactive plasma beams to the patterning lines at a non-zero angle relative to a perpendicular to a plane defined by an upper surface of the patterning lines, wherein the one or more reactive plasma beams modulate a line CD between a first pair of adjacent patterning lines by performing at least one of the following: an angled etch to remove a material of the patterning lines from the first and second sidewalls, and an angled deposition to form an additional material along the first and second sidewalls.

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