Oxidizer free si-o flowable gap-fill method

TW202634116APending Publication Date: 2026-08-16APPLIED MATERIALS INC
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Patent Information

Application Number
TW114147688
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-05
Filing Date
2025-12-05
Publication Date
2026-08-16

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Abstract

A method for processing a substrate is provided. The method includes exposing an oxidizer free gas to a plasma source to generate plasma. The method includes exposing the substrate to one or more precursor gases and one or more reactive species of the plasma to deposit a flowable film onto the substrate. The one or more precursor gases having at least one of a silicon-hydrogen structure and a silicon-oxygen structure. The method includes curing the flowable film at a temperature that is less than
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