Reaction chambers, and ion traps with slanted holes in substrate processing systems
TW202634117APending Publication Date: 2026-08-16ASM IP HLDG BV
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Patent Information
- Application Number
- TW114139392
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-10-18
- Filing Date
- 2025-10-14
- Publication Date
- 2026-08-16
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Abstract
Ion traps for use in substrate processing systems are disclosed. The ion traps may comprise at least one hole. The hole may comprise an interior surface that is slanted relative to a top surface or a bottom surface of the ion trap. The hole may prevent plasma ions from passing through the ion trap and / or allow plasma radicals to pass through the ion trap.
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