Dual frequency pulsed plasma processing treatments

Abstract

A processing method includes depositing a first layer on a field region and sidewalls of a via of an interconnect structure, and treating the first layer by establishing a pulsed dual RF frequency CCP, where (i) the dual RF frequency CCP is formed using the first RF generator and a second RF generator coupled to a first electrode, (ii) the pulsed dual RF frequency CCP is formed by simultaneously delivering pulses of the first RF signal and the second RF signal at a pulsing frequency and a duty cycle to the first electrode, and (iii) the first RF frequency is greater than the second RF frequency.

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