Manufacturing method of semiconductor wafer

Abstract

It is an object to suppress the occurance of the wafer placement shift on a susceptor in a single wafer processing heat treatment furnace. A manufacturing method of a semiconductor wafer comprising heat-treating the semiconductor in a single wafer processing heat treatment furnace. The single wafer processing heat treatment furnace has a plurality of liftpins and a susceptor having a plurality of throughholes where the liftpins can respectively insert through in a semiconductor wafer placement region. The manufacturing method includes raising the susceptor and the plurality of throughholes in a situation that the respective plurality of liftpins insert through the respective plurality of throughholes and the respective plurality of liftpins protrude upwardly from the plurality of throughholes to support the semiconductor wafer resulted from making the plurality of liftpins in touch with a blackside of the semiconductor wafer; raising the susceptor only to place the semiconductor wafer supported by the plurality of liftpins into the semiconductor wafer placement region; and heat-treating the semiconductor wafer placed in the semiconductor wafer placement region of the susceptor. A duration when stopping raising the susceptor is included in a duration when raising the susceptor only until the semiconductor wafer is placed in the semiconductor wafer placement region of the susceptor.

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