Methods for detecting and processing small faces of SiC ingots

Abstract

This disclosure relates to a method for detecting and processing small facets of SiC ingots. The method for detecting small facets of SiC ingots includes: establishing a Δω-n linear model; determining nij through the Δω-n linear model; and correlating these doping concentrations nij, the detection image, and the corresponding XY coordinate positions to construct a doping concentration distribution map of the workpiece surface layer. The method for processing SiC ingots includes: correlating these laser processing powers Pij, the detection image, and the corresponding XY coordinate positions based on the doping concentration distribution map and a preset nP curve model to construct a power distribution map of the workpiece modified layer; and focusing the processing laser beam at a predetermined depth of the workpiece to perform internal modification, thereby obtaining a silicon carbide workpiece with a modified layer.

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