Semiconductor structure and methods of forming the same

Abstract

A method includes forming a waveguide including a base layer and a protrusion, forming first metal film and a second metal film on opposing sides of the protrusion, and depositing an insulating layer over the first metal film and the second metal film. The insulating layer is etched to form a first opening and a second opening on opposing sides of the protrusion. The first metal film and the second metal film are also exposed to the first opening and the second opening, respectively. A first electrode and a second electrode are formed in the first opening the second opening, respectively. The first metal film includes a first portion between the first electrode and the protrusion. The second metal film includes a second portion between the second electrode and the protrusion. The first electrode and the second electrode are configured to apply an electrical field to the protrusion.

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