Semiconductor device and method of manufacturing the same, memory device, and electronic device

Abstract

The present application provides a semiconductor device, a method of manufacturing the same, a memory device, and an electronic device. The semiconductor device comprises: a first transistor layer comprising a first transistor which comprises a first terminal, a second terminal and a first driving terminal; a second transistor layer formed above the first transistor layer, comprising an oxide structure, a first conductive structure, a second conductive structure, and a third conductive structure, wherein the first conductive structure forms a third terminal of the second transistor in a first portion of the oxide structure, the second conductive structure forms a fourth terminal of the second transistor in a second portion of the oxide structure, and the third conductive structure serves as a second driving terminal of the second transistor; a capacitor layer formed above the second transistor layer, comprising a capacitor, wherein the first driving terminal of the first transistor, the third terminal of the second transistor, and a first electrode structure of the capacitor are electrically connected.

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