Manufacturable ultra-thin stacked compute and memory integrated circuit cube for high bandwidth and capacity

Abstract

In an example, the present invention provides a semiconductor integrated circuit cube device. The device has an interposer substrate member comprising a backside and a front side. In an example, the device has a plurality of sub-cube devices, each of which comprises a silicon substrate and a plurality of logic circuits or a plurality of memory circuits. In an example, each of the plurality of sub-cubes is manufactured as a separate device. In an example, each of the sub-cube devices comprises a hybrid bondable material. In an example, each of the sub-cube devices comprises a plurality of micro TSV structures configured to provide electrical routing through one or more devices in each of the sub-cube devices.

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