Precision tuning of a page or word of non-volatile memory cells and associated high voltage circuits for an analog neural memory array in an artificial neural network

TW202634611APending Publication Date: 2026-08-16SILICON STORAGE TECHNOLOGY INC
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW115117458
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2020-09-22
Filing Date
2021-03-12
Publication Date
2026-08-16

Smart Images

  • Figure TWG2TA001073612_001
    Figure TWG2TA001073612_001
  • Figure TWG2TA001073612_002
    Figure TWG2TA001073612_002
  • Figure TWG2TA001073612_003
    Figure TWG2TA001073612_003
Patent Text Reader

Abstract

Numerous embodiments for performing tuning of a page or a word of non-volatile memory cells in an analog neural memory are disclosed. High voltage circuits used to generate high voltages applied to terminals of the non-volatile memory cells during the precision tuning process are also disclosed. Programming sequences for the application of the voltages to the terminals to minimize the occurrence of disturbances during tuning are also disclosed.
Need to check novelty before this filing date? Find Prior Art