Substrate processing methods, semiconductor device manufacturing methods, processes, and substrate processing apparatus

Abstract

The substrate processing method of the present invention includes: (a) supplying a first gas containing a Group 14 element to preferentially form a first film containing the Group 14 element contained in the first gas on the exposed surface of the Group 14 element on the bottom side of a recess of the substrate; (b) supplying a second gas containing a Group 14 element to form a second film containing the Group 14 element contained in the second gas in the recess of the substrate; (c) supplying a third gas containing a second halogen element to etch a portion of the second film; and (d) after (c) removing the second halogen element remaining on the substrate.

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