Vertical cavity light-emitting element and its manufacturing method

Abstract

The method comprises the following steps: forming a first reflector; forming a first semiconductor layer on the first reflector; forming a multiple quantum well layer comprising a first to an nth well layer (n being an integer greater than or equal to 3) on the first semiconductor layer; forming a final barrier layer on the nth well layer, which is the final well layer among the multiple quantum well layers; forming an electron barrier layer on the final barrier layer; forming a second semiconductor layer on the electron barrier layer; and forming a second reflector on the second semiconductor layer. The first to nth well layers contain In in their composition and are grown using nitrogen (N2) as the carrier gas; the step of forming the final barrier layer involves raising the growth temperature and adding hydrogen (H2) to the carrier gas for growth.

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