Semiconductor structure
Patent Information
- Application Number
- TW114104125
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-02-05
- Publication Date
- 2026-08-16
- Estimated Expiration
- 2045-02-04
Smart Images
Figure TWG2TA001072022_001 
Figure TWG2TA001072022_002 
Figure TWG2TA001072022_003
Abstract
Claims
1. A semiconductor structure suitable for use in a sense amplifier, comprising: The first pair of transistors includes a first P-type transistor and a first N-type transistor that are electrically connected to each other; And a second pair of transistors electrically connected to the first pair of transistors, and including a second P-type transistor and a second N-type transistor electrically connected to each other, wherein the channel area of the first P-type transistor is different from the channel area of the second P-type transistor, and / or the channel area of the first N-type transistor is different from the channel area of the second N-type transistor, and the first pair of transistors and the second pair of transistors constitute part of the sensing amplifier, and during the operation of the sensing amplifier, the voltage difference between the critical voltages of the first P-type transistor and the second P-type transistor is 0, and the voltage difference between the critical voltages of the first N-type transistor and the second N-type transistor is 0.
2. The semiconductor structure as claimed in claim 1, wherein the channel area of the first P-type transistor is greater than the channel area of the second P-type transistor.
3. The semiconductor structure as claimed in claim 2, wherein in a direction perpendicular to the gate extension direction, the width of the gate of the first P-type transistor is the same as the width of the gate of the second P-type transistor, and in the gate extension direction, the length of the active region of the first P-type transistor is greater than the length of the active region of the second P-type transistor.
4. The semiconductor structure as claimed in claim 2, wherein in the gate extension direction, the length of the active region of the first P-type transistor is the same as the length of the active region of the second P-type transistor, and in a direction intersecting the gate extension direction, the width of the gate of the first P-type transistor is greater than the width of the gate of the second P-type transistor.
5. The semiconductor structure as claimed in claim 1, wherein the channel area of the first N-type transistor is greater than the channel area of the second N-type transistor.
6. The semiconductor structure of claim 5, wherein in a direction perpendicular to the gate extension direction, the width of the gate of the first N-type transistor is the same as the width of the gate of the second N-type transistor, and in the gate extension direction, the length of the active region of the first N-type transistor is greater than the length of the active region of the second N-type transistor.
7. The semiconductor structure of claim 5, wherein in the gate extension direction, the length of the active region of the first N-type transistor is the same as the length of the active region of the second N-type transistor, and in a direction intersecting the gate extension direction, the width of the gate of the first N-type transistor is greater than the width of the gate of the second N-type transistor.
8. The semiconductor structure as claimed in claim 1, wherein the sensing amplifier includes the semiconductor structure, and during operation of the sensing amplifier, the threshold voltage of the first P-type transistor is the same as the threshold voltage of the second P-type transistor.
9. The semiconductor structure as claimed in claim 1, wherein the sensing amplifier includes the semiconductor structure, and during operation of the sensing amplifier, the threshold voltage of the first N-type transistor is the same as the threshold voltage of the second N-type transistor.