Three dimensional semiconductor device

Abstract

A three dimensional semiconductor device includes a bit line that is spaced apart from a substrate and extends in a direction perpendicular to a lower surface of the substrate, first semiconductor patterns on a first side surface of the bit line, the first semiconductor patterns including a first uppermost pattern which is an uppermost one of the first semiconductor patterns, and a word line surrounding the first semiconductor patterns. The first uppermost pattern includes a first top edge portion that is spaced apart from a second top edge portion in a first direction, and a first top channel region between the first top edge portion and the second top edge portion, a thickness of the first top edge portion is greater than a thickness of the first top channel region, and a thickness of the second top edge portion is greater than the thickness of the first top channel region.

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