Semiconductor device and methods of forming the same
TW202634920APending Publication Date: 2026-08-16NAN YA TECH
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Patent Information
- Application Number
- TW114121537
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-07
- Filing Date
- 2025-06-09
- Publication Date
- 2026-08-16
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Abstract
A method of forming a semiconductor device, comprising forming a logic structure, forming dynamic random access memory (DRAM) structures, vertically stacking the DRAM structures into at least one DRAM stack, disposing the at least one DRAM stack on the backside of the first substrate of the logic structure, and filling a molding layer around the DRAM stack. The semiconductor device is also disclosed.
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