Semiconductor device and methods of forming the same

TW202634920APending Publication Date: 2026-08-16NAN YA TECH
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Patent Information

Application Number
TW114121537
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-07
Filing Date
2025-06-09
Publication Date
2026-08-16

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Abstract

A method of forming a semiconductor device, comprising forming a logic structure, forming dynamic random access memory (DRAM) structures, vertically stacking the DRAM structures into at least one DRAM stack, disposing the at least one DRAM stack on the backside of the first substrate of the logic structure, and filling a molding layer around the DRAM stack. The semiconductor device is also disclosed.
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