Semiconductor device including a capacitor structure

Abstract

A semiconductor device includes a first electrode layer on a substrate and including a first main electrode portion and a first electrode top portion on the first main electrode portion with a step defined therebetween, a second electrode layer on the first electrode layer, a conductive skin layer on a first portion of a side wall of the first electrode top portion, an insulating skin layer on a second portion of the side wall of the first electrode top portion, a supporter pattern on a side wall of the insulating skin layer and a side wall of the conductive skin layer, a capacitor dielectric layer on a side wall of the first electrode layer and a side wall of the second electrode layer, and an upper electrode on the capacitor dielectric layer.

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