Semiconductor devices

TW202634927APending Publication Date: 2026-08-16KIOXIA CORP
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114121285
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-13
Filing Date
2025-06-06
Publication Date
2026-08-16

Smart Images

  • Figure 00000000_0000_ABST
    Figure 00000000_0000_ABST
Patent Text Reader

Abstract

[Problem] To provide a semiconductor device that improves operating speed and reliability. [Solution] A semiconductor device comprising: a source electrode; an insulator disposed above the source electrode; a first conductive layer in contact with the insulator in a first region; a second conductive layer disposed between the source electrode and the first conductive layer, and in contact with the insulator in a second region at a lower height from the source electrode than the first region; a first insulating layer disposed between the first conductive layer and the second conductive layer, and in contact with the insulator in a third region connecting the first region and the second region along a first direction; and a first columnar conductive portion disposed at the boundary between the first region and the third region, extending along a second direction orthogonal to the first direction, and connected to the first conductive layer.
Need to check novelty before this filing date? Find Prior Art