Semiconductor devices
TW202634927APending Publication Date: 2026-08-16KIOXIA CORP
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Patent Information
- Application Number
- TW114121285
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-13
- Filing Date
- 2025-06-06
- Publication Date
- 2026-08-16
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Abstract
[Problem] To provide a semiconductor device that improves operating speed and reliability. [Solution] A semiconductor device comprising: a source electrode; an insulator disposed above the source electrode; a first conductive layer in contact with the insulator in a first region; a second conductive layer disposed between the source electrode and the first conductive layer, and in contact with the insulator in a second region at a lower height from the source electrode than the first region; a first insulating layer disposed between the first conductive layer and the second conductive layer, and in contact with the insulator in a third region connecting the first region and the second region along a first direction; and a first columnar conductive portion disposed at the boundary between the first region and the third region, extending along a second direction orthogonal to the first direction, and connected to the first conductive layer.
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