Semiconductor memory device and method for manufacturing semiconductor memory device

Abstract

This invention provides a semiconductor memory device with improved operational reliability and a method for manufacturing the semiconductor memory device. The semiconductor memory device includes: a multilayer body in which a plurality of first insulating layers and a plurality of first conductive layers are alternately deposited along a first direction in a first region; and in a second region disposed further along the first direction than the first region, a plurality of second insulating layers and a plurality of second conductive layers, each thinner than the plurality of first insulating layers, are alternately deposited along the first direction; a semiconductor film extending along the first direction and penetrating the first region and the second region; and a charge storage film including a plurality of first protrusions and a plurality of second protrusions. The plurality of first protrusions are disposed between the plurality of first conductive layers and the semiconductor film in the first region, are continuous with each other in the first direction, and protrude toward the plurality of first conductive layers at positions corresponding to the plurality of first conductive layers; the plurality of second protrusions are disposed between the plurality of second conductive layers and the semiconductor film in the second region, are separated from each other in the first direction, and protrude toward the plurality of second conductive layers at positions corresponding to the plurality of second conductive layers.

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