Vertical NAND flash memory device, method of fabricating the same, and electronic apparatus

TW202634935APending Publication Date: 2026-08-16SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
TW114140488
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-29
Filing Date
2025-10-20
Publication Date
2026-08-16

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Abstract

Provided are a vertical NAND flash memory device, a method of fabricating the vertical NAND flash memory device, and an electronic apparatus including the vertical NAND flash memory device. The vertical NAND flash memory device includes a plurality of cell strings each extending in a direction perpendicular to a substrate. Each of the plurality of cell strings includes a channel layer, a charge trap layer provided on the channel layer and including an amorphous oxide, at least one insertion layer provided inside the charge trap layer, and a plurality of gate electrodes provided on the charge trap layer.
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