Phase-change material memory devices and methods of forming the same

Abstract

Phase-change memory devices and methods of fabricating the same. In some embodiments, a phase-change memory device includes a bottom electrode, a top electrode, and a phase-change material disposed between the top electrode and the bottom electrode. The phase-change material is configured to switch between an amorphous state and a crystalline state in response to heating. The phase-change memory device includes a liner extending from the bottom electrode along at least one side of the phase-change material to the top electrode. The phase-change memory device includes a heater comprising a vertical portion of the liner extending upward from the bottom electrode toward the phase-change material. The phase-change memory device includes a spacer positioned adjacent to the vertical portion of the liner.

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