Power delivery for ai computing with orthogonal embedding and edge access

Abstract

A semiconductor device with a vertically mounted IPD may include a substrate may include a cavity. The device may include a vertically mounted IPD disposed within the cavity. The vertically mounted IPD may include a capacitor including electrical contacts on a vertical edge of the capacitor. The vertically mounted IPD may include an inductor with electrical contacts on a vertical edge of the inductor. The device may include a metal layer in electrical contact on a first edge of the vertically mounted IPD, the first edge in electrical contact with at least one of the electrical contacts on the vertical edge of the capacitor or the electrical contacts on the vertical edge of the inductor. The device may include a device layer in electrical contact with the metal layer. The device may include a backside power delivery network in electrical contact with a second edge of the vertically mounted IPD.

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