Dual side metal-insulator-metal (MIM) capacitor for power integration

Abstract

A semiconductor structure includes a multi-stack metal-insulator-metal (MIM) capacitor structure having a substrate and a frontside plate including fingers extending into the substrate. A first dielectric layer is located between the frontside plate and the substrate. The multi-stack MIM capacitor structure further has a backside plate and a second dielectric layer located between the backside plate and the substrate. The backside plate and the second dielectric layer conform to a topography of the fingers of the frontside plate and the first dielectric layer.

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