Device and integrated circuit including metal-insulator-metal (MIM) capacitor and method of establishing the same

Abstract

Some embodiments relate to a device including a semiconductor substrate, and an interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a lower metal line, an intermediate metal line, and an upper metal line, and a plurality of metal vias. A first electrode disposed in the interconnect structure includes a first lateral portion and a protrusion that extends downward from the first lateral portion. The first lateral portion is disposed over an upper surface of the upper metal line, and the protrusion extends below a lower surface of the lower metal line. A second electrode is disposed in the interconnect structure, matingly engages the first electrode, and has a lower surface that is below a lower surface of the first electrode. A dielectric laterally surrounds an inner sidewall structure of the second electrode to separate the second electrode from an outer sidewall structure of the first electrode.

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