Power conversion device

Abstract

This invention provides a power conversion device that can suppress the action of parasitic thieves in an IGBT having two gates that can be driven independently, thereby improving the RBSOA withstand capability. The power conversion device includes: a semiconductor switching element 100 having a first gate electrode 5A and a second gate electrode 5B that can be driven independently; and a drive circuit that drives the semiconductor switching element 100, wherein the semiconductor switching element 100 is an IGBT. When the semiconductor switching element 100 is turned off, a disconnect signal is applied to the second gate electrode 5B inside the second trench 3B before the first gate electrode 5A inside the first trench 3A. When the distance between the contact layer 7 and the first trench 3A is set as a first distance d1, and the distance between the contact layer 7 and the second trench 3B is set as a second distance d2, the second distance d2 is shorter than the first distance d1.

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